| PART |
Description |
Maker |
| H5N2522FP-E0-E-15 |
250V - 12A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK5002DJE RJK5002DJE-00Z0 RJK5002DJE-15 |
500V - 2.4A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK5032DPD |
500V - 3A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK5035DPP-E0 |
500V - 10A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| BAS516 |
High Spee d Switching Diode
|
Chendahang Electronics ...
|
| 2SK1280 |
N-Channel MOS-FET(500V, 0.5Ohm, 18A, 150W)
N-Channel MOS-FET(500V 0.5Ohm 18A 150W)
|
FUJI[Fuji Electric]
|
| 2SJ357 D10803EJ3V0DS00 2SJ357-T1 2SJ357-T2 |
P-channel MOS FET(-30V, -3A)
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH
From old datasheet system
|
NEC[NEC]
|
| APT5020BN APT5022BN |
POWER MOS IV 500V 28.0A 0.20 Ohm / 500V 27.0A 0.22 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
| 2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification
Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor
http://
|
| IRFU420B IRFR420B IRFU420BTU IRFR420BTM IRFR420BTF |
500V N-Channel B-FET / Substitute of IRFR420 & IRFR420A
500V N-Channel B-FET / Substitute of IRFU420 & IRFU420A
500V N-Channel MOSFET 2.3 A, 500 V, 2.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
|
FAIRCHILD[Fairchild Semiconductor]
International Rectifier
Fairchild Semiconductor, Corp.
|
| APT50M50JVFR |
POWER MOS V 500V 77A 0.050 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT5020BVR |
POWER MOS V 500V 26A 0.200 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
